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- Manufacturer No：MT29F16G08ABABAWP-IT:B TR
- Manufacturer：
- Category：Memory
- Datasheet：
- SKU：3920891
- Description：Obsolete 2004 DUAL Non-Volatile ic memory -40C~85C TA 2.7V 17179869184bit 12mm
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- Manufacturer No：MT29F16G08ABABAWP-IT:B TR
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：MT29F16G08ABABAWP-IT:B TR
- SKU：3920891
- Description：Obsolete 2004 DUAL Non-Volatile ic memory -40C~85C TA 2.7V 17179869184bit 12mm
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MT29F16G08ABABAWP-IT:B TR Details
Obsolete 2004 DUAL Non-Volatile ic memory -40C~85C TA 2.7V 17179869184bit 12mm
MT29F16G08ABABAWP-IT:B TR Specification Parameters
- RoHS Status: ROHS3 Compliant
- Packaging: Tape & Reel (TR)
- Surface Mount: YES
- Memory Width: 8
- Supply Voltage: 3.3V
- Operating Temperature: -40°C~85°C TA
- Factory Lead Time: 17 Weeks
- Number of Terminations: 48
- Published: 2004
- Programming Voltage: 2.7V
- Height Seated (Max): 1.2mm
- Width: 12mm
- Operating Mode: ASYNCHRONOUS
- Technology: FLASH - NAND
- Package / Case: 48-TFSOP (0.724, 18.40mm Width)
- Memory Density: 17179869184 bit
- Base Part Number: MT29F16G08
- Mounting Type: Surface Mount
- Number of Functions: 1
- Part Status: Obsolete
- Terminal Position: DUAL
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Terminal Pitch: 0.5mm
- Memory Format: FLASH
- Supply Voltage-Max (Vsup): 3.6V
- Supply Voltage-Min (Vsup): 2.7V
- Memory Interface: Parallel
- Memory Type: Non-Volatile
- Voltage - Supply: 2.7V~3.6V
- Length: 18.4mm
- JESD-30 Code: R-PDSO-G48
- Memory Size: 16Gb 2G x 8
- Organization: 2GX8
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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